Збірник наукових праць Наносистеми, наноматеріали, нанотехнології
Рік 2025 Том 23, Випуск 4
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Ahmed HASHIM1, Hamed IBRAHIM2, and Aseel HADI3

1College of Education for Pure Sciences, Department of Physics, University of Babylon, Hillah, Iraq
2Al-Zahraa University for Women, Baghdad Road (opposite pole 70), Kerbala, Iraq
3College of Materials Engineering, Department of Ceramic and Building Materials, University of Babylon, Hillah, Iraq

Tailored Dielectric Parameters of PVA/Si3N4/SiC Nanostructures for Nanoelectronics Fields

1147–1154 (2025)

PACS numbers: 72.80.Tm, 77.22.Ch, 77.22.Gm, 77.84.Lf, 81.07.Pr, 82.35.Np, 85.35.-p

Надійшла 28 листопада 2023 р.

У цій роботі досліджуються синтеза нових наноструктур PVA–Si3N4–SiC та їхні діелектричні властивості для використання у різних галузях наноелектроніки. Діелектричні властивості наноструктур PVA–Si3N4–SiC було протестовано в діяпазоні частот від 100 Гц до 2 МГц. Результати підтвердили, що діелектрична проникність і діелектричні втрати наноструктур PVA–Si3N4–SiC зменшилися, тоді як електропровідність зросла зі зростанням частоти. Діелектричні параметри (діелектрична проникність, діелектричні втрати й електропровідність) PVA поліпшувалися зі збільшенням вмісту наночастинок Si3N4–SiC. Остаточні результати дослідження діелектричних властивостей наноструктур PVA–Si3N4–SiC показали, що виготовлені наноструктури придатні для різних застосувань у наноелектроніці.

КЛЮЧОВІ СЛОВА: полівініловий спирт, Si3N4, SiC, наноструктури, діелектричні властивості

Цитування:
Ahmed Hashim, Hamed Ibrahim, and Aseel Hadi, Tailored Dielectric Parameters of PVA/Si3N4/SiC Nanostructures for Nanoelectronics Fields, Nanosistemi, Nanomateriali, Nanotehnologii, 23, No. 4: 1147–1154 (2025); https://doi.org/10.15407/nnn.23.04.1147
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