Collection of scientific works Nanosystems, nanomaterials, nanotechnologies
Year 2025 Volume 23, Issue 4
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Ahmed HASHIM1, Hamed IBRAHIM2, and Aseel HADI3

1College of Education for Pure Sciences, Department of Physics, University of Babylon, Hillah, Iraq
2Al-Zahraa University for Women, Baghdad Road (opposite pole 70), Kerbala, Iraq
3College of Materials Engineering, Department of Ceramic and Building Materials, University of Babylon, Hillah, Iraq

Tailored Dielectric Parameters of PVA/Si3N4/SiC Nanostructures for Nanoelectronics Fields

1147–1154 (2025)

PACS numbers: 72.80.Tm, 77.22.Ch, 77.22.Gm, 77.84.Lf, 81.07.Pr, 82.35.Np, 85.35.-p

Received 28 November, 2023

The present work explores the synthesis of new PVA–Si3N4–SiC nanostructures and investigates their dielectric properties to utilize in different nanoelectronics fields. The dielectric properties of PVA–Si3N4–SiC nanostructures are tested with frequency ranged in 100 Hz–2 MHz. The results confirm that the dielectric constant and the dielectric loss of PVA–Si3N4–SiC nanostructures are decreased, while the electrical conductivity is raised with rising frequency. The dielectric parameters (dielectric constant, dielectric loss, and electrical conductivity) of PVA are enhanced with increasing Si3N4–SiC-nanoparticles’ content. The final results of dielectric properties for PVA–Si3N4–SiC nanostructures exhibit the fabricated nanostructures as suitable for various nanoelectronics applications.

KEY WORDS: PVA, Si3N4, SiC, nanostructures, dielectric properties

DOI: https://doi.org/10.15407/nnn.23.04.1147

Citation:
Ahmed Hashim, Hamed Ibrahim, and Aseel Hadi, Tailored Dielectric Parameters of PVA/Si3N4/SiC Nanostructures for Nanoelectronics Fields, Nanosistemi, Nanomateriali, Nanotehnologii, 23, No. 4: 1147–1154 (2025); https://doi.org/10.15407/nnn.23.04.1147
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