Issues

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2019

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vol. 17 /

Issue 4

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Yacine Aoun, Said Benramache
«The Effect of the Doping Levels on Urbach Energy of the Zinc Oxide Thin Films»
717–727 (2019)

PACS numbers: 78.55.Et, 78.66.Hf, 78.66.Jg, 78.67.Bf, 81.05.Dz

Within the proposed model, the calculated Urbach energy of the undoped and Bi-, Sn- and Fe-doped ZnO thin films is studied as a function of doping levels. The Bi-, Sn- and Fe-doped ZnO films were deposited by spray depositions at various conditions such as ZnO-based solution molarity and doping levels. The measurements by means of this proposed model are found to be in a qualitative agreement with the experimental data with high correlation coefficients of 0.92–0.98. The Urbach-energy calculations for doped films are improved to maximum enhancement corresponding to minimum error, which is found for the Sn- and Fe-doped ZnO films to be 5.5 and 5.1%, respectively.

Keywords: ZnO, thin film, semiconductor doping, correlation

https://doi.org/10.15407/nnn.17.04.717

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© NANOSISTEMI, NANOMATERIALI, NANOTEHNOLOGII G. V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine, 2019
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