Issues

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2018

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vol. 16 /

Issue 2

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Yu. O. Kruglyak
«Physics of Nanotransistors: the Theory of the Metal-Oxide-Semiconductor Field-Effect Transistor in a Traditional Posing, the Principles of Model of a Virtual Source, and Approximation of an Exhaustion»
233–270 (2018)

PACS numbers: 72.20.Dp, 72.80.Ey, 85.30.De, 85.30.Pq, 85.30.Tv, 85.40.Bh

The traditional theory of MOSFET is discussed. Only the most significant ideas of the traditional approach, which also received the ‘top–down’ label, are discussed. In particular, we shall confine ourselves by means of the simulating only the linear region and the saturation region of the current–voltage characteristics and, at the same time, show that the essential features of the traditional approach are quite acceptable and can serve as a starting point in the development of a completely different physical picture of processes in the nanotransistors. The traditional MOSFET model is rewritten in a form close to the virtual source model. The application of this improved model to modern nanotransistors is surprisingly successful that is a consequence of taking into account MOS electrostatics through such an important factor as controlling the height of the barrier between the source and the channel from the gate side. The weakest point of this model is the description of electron transport, because it is based on the use of such concepts as mobility and saturation velocity. That is why these two metrics are chosen as fitting parameters in order to fit to the experimental data for the output characteristics. Next, we return to a deeper examination of MOS electrostatics and show how to describe the subthreshold and above-threshold regions correctly as possible, resulting in an improved model of the virtual source. However, the mobility and saturation velocity will nevertheless remain as fitting parameters. After that, we will physically more correctly describe the transport of electrons taking into account the possibility of ballistic transport and finally describe a virtual source model adequate to modern nanotransistors with a conduction channel length of not less than 10 nm.

Keywords: nanoelectronics, field effect transistor, current–voltage characteristics, transistor metrics, transistor control, virtual source

https://doi.org/10.15407/nnn.16.02.233

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