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O. M. Bordun, I. O. Bordun, I. M. Kofliuk, I. Yo. Kukharskyy, I. I. Medvid, Zh. Ya. Tsapovska, D. S. Leonov
«Morphology of Thin Films Y\(_2\)O\(_3\):Eu Obtained by Different Methods»
053–058 (2020)

PACS numbers: 61.72.Ff, 61.72.Mm, 68.35.Ct, 68.37.Ps, 68.55.J-, 81.15.Cd, 81.15.Gh

Thin Y\(_2\)O\(_3\):Eu films are obtained by the method of radio-frequency (RF) ion-plasma sputtering in an argon atmosphere and discrete evaporation in vacuum. Investigation of the surface morphology of thin films by atomic force microscopy (AFM) shows that, when switching from RF sputtering to discrete evaporation, the mean square surface roughness increases at close diameters of nanocrystallite grains on the film surface. As established, the grain-size distribution during RF sputtering corresponds to the normal logarithmic distribution with one distribution centre, and for discrete evaporation, this is with two distribution centres. The ratio of distribution centres indicates the coalescence of grains with themselves.

Keywords: yttrium oxide, thin films, nanocrystallite

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