vol. 16 / 

Issue 4


Download the full version of the article (in PDF format)

S. O. Vambol, I. T. Bogdanov, V. V. Vambol, Ya. O. Suchikova, and S. S. Kovachov
«Correlation between Technological Factors of Synthesis of por-GaP and Its Acquired Properties»
657–670 (2018)

PACS numbers: 61.43.Gt, 61.72.Qq, 68.55.J-, 81.05.Rm, 81.65.Cf, 84.60.-h

Technological factors are established for formation of the porous layer on the surface of monocrystalline gallium phosphide using the method of electrochemical etching. To formulate technological factors ensuring the formation of porous layers of the prescribed level of quality, the duration of etching, current density, and electrolyte are referred. Correlation of these factors and morphological properties of por-GaP is established. As revealed, the porosity of gallium phosphide is almost linearly dependent on the duration of etching. In addition, correlation is observed with the current density, at which the anodization is carried out. As established, under too high current density, pore-formation almost does not occur. Instead, the electrochemical polishing of specimen surface takes place. Based on the results of studies, the criterion of quality of morphological composition of gallium-phosphide porous layers is proposed that takes in consideration all characteristic indices of the porous surface. According to this criterion, three examined specimens from twenty ones can be referred to the group of standards. However, for the establishment of level of quality of nanostructures, it is necessary to carry out the estimation using other criteria as well. The understanding of chemical composition of nanostructures is of the extreme importance, since a porous surface shows the ability to be overgrown with oxides. For industrial application of nanostructures, the estimation of technological and economic criteria is also necessary. In addition, more and more researchers state about risks for the environment, which arise during the synthesis and usage of nanotechnological products, as well as ways to decrease their negative impact. Therefore, it is necessary to carry out a complex estimation of nanomaterials that should be based on the systems approach taking into account all criteria of quality of nanostructures.

Keywords: por-GaP, electrochemical etching, morphology, porous semiconductors, etching conditions

1. E. Monaico, I. Tiginyanu, O.Volciuc, T. Mehrtens, A. Rosenauer, J. Gutowski, and K. Nielsch, Electrochem. Technol., 47: 29 (2014).
2. S. Vambol, I. Bogdanov, V. Vambol, Y. Suchikova, O. Kondratenko, O. Hurenko, and S. Onishchenko, Eastern-European Journal of Enterprise Technologies, 3, No. 5 (87): 37 (2017).
3. Y. Lee, H.Jung, J. Kim, and Y. Kang, Appl. Catal. B-Environ., 224: 594 (2018).
4. H. Mammar, A. Benmansour, and F. Kerroumi, Journal of Surface Science and Technology, 34, Iss. 1-2: 16433 (2018).
5. Y. Suchikova, Eastern-European Journal of Enterprise Technologies, 6, No. 5 (84): 26 (2016).
6. S. Vambol, I. Bogdanov, V. Vambol, Y. Suchikova, H. Lopatina, and N. Tsybuliak, Eastern-European Journal of Enterprise Technologies, 6, No. 5 (90): 22 (2017).
7. L. Li, Advances in Laser Materials Processing, March: 20 (2010).
8. P. Dwivedi, N. Chauhan, P. Vivekanandan, S. Das, D. S. Kumar, and S. Dhanekar, Sensor Actuat. B-Chem., 249: 602 (2017).
9. Y. Suchikova, V. V. Kidalov, and G. A. Sukach, Semiconductors, 45, No. 1: 121 (2011).
10. P. Dwivedi, S. Dhanekar, S. Das, and S. Chandra, J. Mater. Sci. Technol., 33, No. 6: 516 (2017).
11. Y. Suchikova, Journal of Nano- and Electronic Physics, 7, No. 3: 03017-1 (2015).
12. X. Geng, Y. Zhang, Y. Han, J. Li, L. Yang, M. Benamara, and H. Zhu, Nano Lett., 17, No. 3: 1825 (2017).
13. S. Beckemper, J. Huang, A. Gillner, and K. Wang, Laser Micro/Nanoeng., 6, No. 1: 49 (2011).
14. Nanotechnology Products Database (NPD),
15. S. Biswas, S. Barth, and J. Holmes, Nano Res., 10, No. 5: 1510 (2017).
16. M. H. Dastjerdi, E. M. Fiordaliso, E. D. Leshchenko, A. Akhtari-Zavareh, T. Kasama, M. Aagesen, and R. R. LaPierre, Nano Lett., 17, No. 10: 5875 (2017).
17. Z. Zhong, Z. Li, Q. Gao, K. Peng, L. Li, and Z. Wang, Nano Energy, 28: 106 (2016).
18. Y. O. Suchikova, Journal of Nano- and Electronic Physics, 9, No. 1: 1006-1 (2017).
19. D. Xu, D. Chen, Y. Xu, X. Shi, G. Guo, L. Gui, and Y. Tang, Pure Appl. Chem., 72, No. 1: 127 (2000).
20. D. Yan, M. Hu, S. Li, J. Liang, Y. Wu, and S. Ma, Electrochim. Acta, 115: 297 (2014).
21. H. F ll, J. Carstensen, and S. Frey, J. Nanomater., 2006: 1 (2006).
22. V. P. Ulin and S. G. Konnikov, Fiz. Tekhn. Poluprovodn., 41, No. 7: 854 (2007).
23. V. Rajendran, Adv. Mat. Res., 67: 71 (2009).
24. S. Vambol, V. Vambol, I. Bogdanov et al. Eastern-European Journal of Enterprise Technologies, 6, No. 10 (90): 57 (2017).
Creative Commons License
This article is licensed under the Creative Commons Attribution-NoDerivatives 4.0 International License
©2003—2021 NANOSISTEMI, NANOMATERIALI, NANOTEHNOLOGII G. V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine.

E-mail: Phones and address of the editorial office About the collection User agreement