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Year 2018 Volume 16, Issue 3 |
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Issues/2018/vol. 16 /Issue 3 |
Yu. O. Kruglyak
«Physics of Nanotransistors: a Gate Voltage and Surface Potential, Mobile Electron Charge in Massive Structure of the Metal-Oxide Semiconductor and in Extremely Thin Silicon on Insulator»
465–507 (2018)
PACS numbers: 71.20.Nr, 73.20.At, 73.22.-f, 73.23.Ad, 73.40.Kp, 85.30.De, 85.35.-p
The physics of processes in the semiconductor MOSFET substrate is determined by the bending of zones that depends on the surface potential , which by-turn is determined by the gate voltage . A sufficiently general equation connecting with is obtained. Under the conditions of the depletion regime, a simpler relationship between and is obtained and will be used. The behaviour of the mobile electron charge, and , is discussed: how does the electron charge vary with both the surface potential and the gate voltage in the conditions before and after the threshold voltage. The correct results in the pre-threshold region and in the strong inversion mode are obtained without resorting to a numerical solution of the Poisson–Boltzmann equation, but, at the same time, a numerical solution of this equation covers both the subthreshold region and the strong inversion region, and the transition region between them. The behaviours and are considered for the completely different MOS structure—the structure with an extremely thin silicon-on-insulator substrate. This MOS structure is typical for the current trend of miniaturization of transistors and is called an extremely thin SoI structure. Nevertheless, as convinced, the main features of the ETSoI structure are similar to those of the massive MOS structure. Dependences and have also been obtained for the ETSoI structure both below and above the threshold. The results obtained suggest that the 1D electrostatics is acceptable for both massive MOS structures and ETSoI ones. However, further it will be shown, how the 2D electrostatics explains why the ETSoI structure with a double gate is preferable for very short nanotransistors.
Keywords: nanoelectronics, field-effect transistor, MOSFET, ETSoI, transistor metrics, transistor control, virtual source
https://doi.org/10.15407/nnn.16.03.465
References
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