Issues

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2018

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vol. 16 /

Issue 1

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I. B. Olenych
«Transport and Relaxation of a Charge in Si–SiO\(_2\) Nanosystems»
191–200 (2018)

PACS numbers: 68.37.Hk, 73.21.La, 73.63.Kv, 78.20.Ci, 78.67.-n, 81.07.Ta, 81.40.Rs

In this work, silicon nanocrystals within the SiO\(_2\) shell are obtained by means of the sedimentation and thermal oxidation of fine-dispersed silicon particles. Effect of the thermal oxidation of silicon-nanocrystals’ system on the optical transmission spectra in the 12000–48000 1/cm range is investigated. An increase in the optical transmittance coefficient in the 12000–15000 1/cm range is registered and related to the short-wave displacement of fundamental absorption edge due to decrease in the silicon-nanocrystals’ sizes. Based on complex investigations by means of impedance spectroscopy and thermally stimulated depolarization method, processes of transfer and relaxation of nonequilibrium charge carriers are studied. Impedance model of Si–SiO\(_2\) nanosystem is constructed, and its electrical parameters are determined. Localized electron states are revealed and have influence on the electron transport properties of Si–SiO\(_2\) nanosystem. The calculated energy distribution of filling density of states has maxima in the energy ranges of 0.2–0.3, 0.35–0.45 and 0.55–0.65 eV.

Keywords: silicon nanocrystals, thermal oxidation, electrical conductivity, impedance, thermally stimulated depolarization, charge traps

https://doi.org/10.15407/nnn.16.01.191

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