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Bashir Mohi Ud Din Bhat and Khurshed A. Shahko
«Effect of Dot Size on Exciton Energy States Confined in a Spherical Gallium Arsenide Quantum Dot»
175–179 (2018)

PACS numbers: 71.15.Qe, 71.35.-y, 73.20.Mf, 73.21.La, 78.67.Hc

Here, we report the effect of dot size on exciton energies confined in a spherical Gallium Arsenide (GaAs) quantum dot and found that exciton energy is purely dependent on the dot size. The results showed that, by increasing the dot size, both the ground state energy and the first excited state energy decrease, and, at a given dot radius, the first excited state exciton energy is found to increase by 5 orders of magnitude more than the ground state exciton energy. In addition, we calculated and plotted the dependence of probability density on the exciton dot size in a GaAs quantum dot, and the results reveal that the probability of the exciton in the ground state is zero, whereas it is maximal in the first excited state. The present work significantly explains the exciton energies in a GaAs quantum dot, and their dependences on size of the semiconducting quantum dot that will find a number of applications in the modelling of future nanosize electronic devices.

Keywords: exciton energy, GaAs quantum dot, probability density, variational method, effective mass approximation

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