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Ю. А. Первак, В. В. Федоров
«Особенности распределения электрического поля в 1D фотонных кристаллах с тремя полуволновыми дефектами»
467–476 (2012)

PACS numbers: 42.70.Qs, 42.79.Bh, 42.79.Wc, 77.84.Bw, 78.67.Pt, 81.70.Fy

Spectral transmission characteristics of the spatially bounded 1D photonic crystals with three half-wave defects are investigated. A photonic crystal consists of 49 alternating layers of silicon and titanium oxides. The structure of crystal and positions of half-wave defects are found, for which three narrow allowed bands distinctively manifest themselves in a region of the forbidden photonic zone. Influence of degree of compliance of defects on positions of the narrow transmission zones and spatial distribution of electric field within the 1D photonic crystal is investigated. As revealed, the electric field is concentrated in the middle of defect layers with a less permittivity, and in the case of high permittivity of defect half-wave layer, it concentrates on the interfaces of layers with low and high permittivity. As shown, the increase of difference in thicknesses of central and two outer resonators, which form the defects of photonic crystal, results in substantial increase of the electric field in resonators. At a difference in thicknesses of 40%, the electric field in resonator layers exceeds the electric field on an entrance surface by 5000 times.