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ISRAA AKRAM ABBAS, AMEERA J. KADHM, and RAHEEM LAFTA ALI

Study of the Effect of Li Doping on ZnO Films Using RF-Magnetron Sputtering Method at Low Temperature
623–636 (2024)

PACS numbers: 73.61.-r, 77.22.Ch, 77.22.Gm, 78.66.Li, 78.67.Sc, 81.15.Cd, 81.40.Tv

In this study, we investigate the effect of Li-doping concentrations (3, 6, and 9%) on the optical and electrical properties of Li-doped ZnO-containing films. Li-doped ZnO films are fabricated by the RF-magnetron sputtering process. The optical and electrical properties of thin-film deposition at different sputtering RF powers in the plasma chamber are investigated. The electrical and optical properties of the thin layer are studied. The results for the optical properties of thin films (ZnO/Li) show that the absorbance, absorption coefficient, and optical conductivity increase with increasing Li concentration, while the energy band gap and transmittance decrease with increasing Li concentration. For all tested temperatures, the D.C. conductivity of the ZnO film increases after Li doping. The D.C. test shows that all films have the same activation energy, and the value of this energy increases as the Li-doping ratio increases. The electrical properties of alternating current demonstrate that, as the frequency of the electric field increases, the dielectric constant and dielectric loss of all films decrease

KEY WORDS: ZnO films, RF-magnetron sputtering method, Li doping, nanocomposite, optical and electrical properties

DOI:  https://doi.org/10.15407/nnn.22.03.623

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