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O.M. BORDUN, I.Yo. KUKHARSKYY, M.V. PROTSAK, I.I. MEDVID, I.M. KOFLIUK, Zh.Ya. TSAPOVSKA, and D.S. LEONOV

Synthesis and Structure of Thin GaN Films by Radio-Frequency Sputtering
287–293 (2024)

PACS numbers: 61.05.cp, 61.72.Cc, 61.72.Mm, 68.35.Ct, 68.55.J-, 81.07.Bc, 81.15.Cd

The structure and features of thin GaN films deposited by means of the radio-frequency (RF) ion-plasma sputtering are investigated. As shown, thin GaN films are formed from nanocrystallites with average dimensions of 14.3 nm and rather low crystal-lattice stresses. The influence of both the working-gas N2 pressure and the substrate temperature on the film deposition rate is investigated

KEY WORDS: gallium nitride, thin films, RF sputtering, structure

DOI:  https://doi.org/10.15407/nnn.22.02.287

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