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O.M. BORDUN, B.O. BORDUN, I.I. MEDVID, M.V. PROTSAK, I.YO. KUKHARSKYY, K.L. BILIAK, D.M. MAKSYMCHUK, I.M. KOFLIUK, and D.S. LEONOV

Surface Morphology of Thin Films of (Y0.06Ga0.94)2O3 Activated by Cr3+
1–11 (2024)

PACS numbers: 61.72.Cc, 61.72.Mm, 68.35.Ct, 68.37.Ps, 68.55. A-, 68.55. Jk, 81.15.Cd

Thin films of (Y0.06Ga0.94)2O3:Cr are obtained by radio-frequency (RF) ion-plasma sputtering in an argon atmosphere on polycrystalline polycor and amorphous upsilon-SiO2 substrates. The study of the surface morphology of thin films by atomic force microscopy (AFM) shows that the transition from N-SiO2 substrates to polycor increases the average diameter of crystallites, which form the film, from 123 nm to 372 nm for films annealed in an argon atmosphere. The heat treatment of films on upsilon-SiO2 substrates in an argon atmosphere leads to an increase in the root-mean-square roughness of thin films, which is of 1.2 nm and 2.9 nm for the unannealed and annealed films in an argon atmosphere, respectively. The analysis of the distributions of crystallites by the value of the grain diameter is carried out, and, as found during the heat treatment of (Y0.06Ga0.94)2O3:Cr films on upsilon-SiO2 substrates, the growth of crystallites perpendicular to the film surface is observed

KEY WORDS: gallium oxide, chromium activator, thin films, crystallites, surface morphology, AFM

DOI:  https://doi.org/10.15407/nnn.22.01.001

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