Collection of scientific works Nanosystems, nanomaterials, nanotechnologies Year 2023 Volume 21, Issue 3
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O. M. Bordun, B. O. Bordun, I. I. Medvid, M. V. Protsak, K. L. Biliak, I. Yo. Kucharskyy, D. M. Maksymchuk, I. M. Kofliuk, and D. S. Leonov
Surface Morphology of (La0.06Ga0.94)2O3:Eu Thin Films
593–603 (2023)

PACS numbers: 61.72.Mm,68.35.Ct,68.37.Ps,68.55.A-,68.55.J-,81.15.Cd,81.15.Gh

Thin films of (La0.06Ga0.94)2O3:Eu are obtained by radio-frequency (RF) ion-plasma sputtering in an argon atmosphere on single-crystal NaCl and amorphous v-SiO2 substrates. The study of the surface morphology of thin films by atomic force microscopy (AFM) shows that the average diameter of crystallites forming the film increases from 23 nm to 48 nm, when there is switching from NaCl to v-SiO2 substrates. The heat treatment of films on v-SiO2 substrates in an argon atmosphere leads to the increase in the average grain diameters to 68 nm and, accordingly, the root-mean-square roughness from 0.5 nm to 6.1 nm. The analysis of the distributions of crystallites by diameter and volume is carried out, and it is proposed that, in the process of RF sputtering, secondary grains grow, and in the process of high-temperature heat treatment, secondary and tertiary grains grow.

Key words: gallium oxide, europium activator, thin films, crystallites, surface morphology.

https://doi.org/10.15407/nnn.21.03.593

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