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O. M. Bordun, V. G. Bihday, ². Yo. Kukharskyy, ². ². Medvid1, ². Ì. Kofliuk, I. Yu. Khomyshyn, Zh. Ya. Tsapovska, and D. S. Leonov
Surface Morphology of Thin ZnGa2O4 Films Obtained by Different Methods
0403–0411 (2023)

PACS numbers: 61.46.Hk, 61.72.Ff, 61.72.Mm, 68.35.Ct, 68.37.Ps, 68.55.J-, 81.15.Cd

Thin films of ZnGa2O4 are obtained by the method of discrete thermal evaporation and radio-frequency (RF) ion–plasma sputtering. Studies of the surface morphology of the obtained films by atomic force microscopy (AFM) show that the transition from discrete thermal evaporation to RF sputtering leads to increases in the average grain diameters by a factor of two and in grain heights by more than a factor of three. As established, the distribution of grains in terms of their diameters is multimodal and has several centres, which in both methods of preparation correlate as small integers. This indicates the growth of small grains among themselves with the formation of large grains.

Key words: zinc gallate, thin films, nanocrystallites.

https://doi.org/10.15407/nnn.21.02.403

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