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V. V. Kidalov, V. P. Kladko, A. F. Dyadenchuk, O. I. Gudymenko, V. A. Baturin, A. Yu. Karpenko, and V. V. Kidalov
ZnO/SiC/Porous-Si/Si Heterostructure: Obtaining and Properties
0639–0645 (2022)

PACS numbers: 61.05.cp, 61.43.Gt, 68.37.-d, 68.65.-k, 77.55.hf, 78.67.Rb, 81.05.Rm

The content of this work demonstrates the zinc-oxide (ZnO) films’ synthesis by means of the HF magnetron sputtering of a zinc target on a silicon substrate using the buffer layers of SiC and porous Si. The synthesis is consisted of three stages: obtaining a mesoporous Si(111) surface by electrochemical etching, SiC films’ deposition on porous silicon substrates by the substitution method, and ZnO films’ synthesis using the high-frequency magnetron sputtering. The zinc-oxide film thickness is of ≅ 1 μm. A microscopic cross-section image of the ZnO film demonstrates its columnar microstructure. The films are in the form of tightly packed (agglomerated) nanograins (of 100–150 nm in size). According to the XRD-measurement results, the ZnO films are oriented along the main texture direction [0001]. The study of the formed-structure surface properties indicates the polycrystalline nature of the coating with a hexagonal lattice of wurtzite type. The coherence-area length determined by the Scherrer formula is of 11.8 nm.

Key words: high-frequency magnetron sputtering, ZnO film, buffer layer, SiC film, mesoporous Si.

https://doi.org/10.15407/nnn.20.03.647

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