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Hassan T. B. ALHammade
Theoretical Study of the Conduction Band and Energy Gap of GaInNAs/InP Quantum Well Structure
0015–0023 (2022)

PACS numbers: 73.21.Fg, 73.40.Lq, 73.63.Hs, 81.07.St, 85.35.Be

Changes of temperature and composition play a major role in enhancement of the electronic properties of low-dimensional semiconductor devices. Therefore, the interest of researchers in this field is increased. In this article, we study the effect of both the temperature and the nitrogen ratio on the electronic structure of GaxIn1-xNyAs1-y/InP quantum well. The band anticrossing model, Varshni model, and Bose–Einstein model are adopted to determine the nitrogen effect on conduction band (E- and E+). The band gap of GaxIn1-xAs as ternary alloy, and band offsets (ΔEc, ΔEv) for the GaxIn1-xNyAs1-y/InP quantum wells are estimated as functions of nitrogen content and temperature. The splitting of conduction band into two nonparabolic subbands due to adding the nitrogen to GaInAs alloy contributes into increase of the band offset of GaxIn1-xNyAs1-y/InP quantum well, and thus, into increase of the number of energy states inside the quantum well. The results may be useful for applications in electronic and optical devices.

Key words: GaxIn1-xNyAs1-y/InP quantum well, conduction band, band an-ticrossing, band offset

https://doi.org/10.15407/nnn.20.01.015

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