Issues

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2021

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vol. 19 /

Issue 1

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B. Zaidi, C. Shekhar, S. Gagui, K. Kamli, Z. Hadef, B. Hadjoudja, B. Chouial
«Annealing and Hydrogenation Effects on the Electrical Properties of Polysilicon Thin Films»
0133–0138 (2021)

PACS numbers: 68.55.Ln, 73.50.Gr, 73.61.Cw, 73.63.Bd, 81.07.Bc, 81.40.Rs, 81.65.Rv

The electrical parameters of the microelectronic devices are limited by the presence of the grain boundaries, including dangling bonds, which can represent states with minority carrier traps. The improvement of photovoltaic efficiency requires a good understanding of the phenomenon of solidification, which varies with temperature. In this work, we study the influence of the annealing temperature and hydrogenation on the electrical conductivity and resistivity. The changes in resistivity as a function of heat treatments show that their overall contribution becomes important with increasing temperature before becoming dominant. The analysis by induced current shows the effect of recombinant grain boundaries and electrical activity.

Keywords: polysilicon, electrical conductivity, trap states, grain boundaries

https://doi.org/10.15407/nnn.19.01.133

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