Issues

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2020

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vol. 18 /

Issue 3

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T. Tkachenko, V. Yevdokymenko, D. Kamenskyh, V. Povazhny, M. Filonenko, V. Kremenetskii, V. Vakhrin, V. Kashkovsky
«Influence of SiC Production Temperature on Its Physicochemical Characteristics»
669–679 (2020)

PACS numbers: 61.05.cp, 61.43.Gt, 68.37.Hk, 68.70.+w, 78.30.-j, 81.07.Wx, 82.80.Pv

Silicon carbide, due to unique physicochemical properties (thermal and chemical stability, oxidation and corrosion resistance, high hardness, resistance to radiation damage), is used to produce oxygen-free ceramics, semiconductors, Schottky diodes, UV sensors, covering of the spaceship hull, and for the fusion reactor wall. Dependent on the way and obtaining condition, some properties of the silicon carbide are changed. In this paper, SiC with morphologies of both particles and whiskers is grown by a direct carbothermal reduction for a shorter holding time of 1 h at 1400–1900\(^{\circ}\)C. Effects of process conditions on the phase composition and morphology of the samples are investigated using XRF, XRD, FTIR–ATR and SEM–EDS, respectively. The XRD results show that the final product is identified as \(\beta\)-SiC having lattice parameter a=4.3365–4.3575 Å that is in close agreement with the reported value of 4.3589 Å. The thickness of the SiC whiskers is increased with the growth of temperature. The results obtained also show that the characteristics of the synthesised SiC particles strongly depend on the heat-treatment conditions.

Keywords: silicon carbide, carbothermal reduction, silicon dioxide, whiskers, heat treatment conditions

https://doi.org/10.15407/nnn.18.03.669

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