Issues

/

2019

/

vol. 17 /

Issue 3

Download the full version of the article (in PDF format)

M. M. Solovan, A. I. Mostovyi, V. V. Brus,, P. D. Maryanchuk
«Influence of Nanostructurization of the Silicon on the Electrical and Photoelectrical Properties of Schottky Diodes Ni/n-Si»
491–506 (2019)

PACS numbers: 71.55.Gs, 72.80.Ey, 73.20.Hb, 73.30.+y, 73.40.Gk, 73.40.Lq, 85.60.Bt

This paper presents the results of studies of the physical properties of the planar and nanostructured Schottky diodes Ni/n-Si fabricated by means of the thin nickel films’ deposition by the magnetron sputtering onto the planar and nanostructured substrates of n-type Si. The electrical and photoelectric properties of the Schottky diodes Ni/n-Si are investigated, and the dominating current-transport mechanisms are established: at forward bias, it is well described by the over-barrier emission in the voltage range 3kT/e???V???0.1 V and the tunnel mechanism in the voltage range V???0.1 V; at reverse bias, there is the tunnel mechanism for the planar Schottky diodes Ni/n-Si; at forward bias, it is well described by the emission recombination in the region of initial forward displacements and the tunnelling mechanism in the region of voltages V???0.2 V; and at reverse bias, there is the tunnel mechanism for the nanostructured Schottky diodes Ni/n-Si. The obtained Schottky diodes Ni/n-Si possess sharply determined rectifying properties with height of the potential barrier ?0???0.27 еV. A new method for determining the active area of nanostructured surface-barrier structures is proposed. The resistance value of the depleted area and the barrier capacity of the studied Schottky diodes are determined. As established, the studied Schottky diodes Ni/n-Si can be successfully used as photodiodes in photodiode operation.

Keywords: nickel, thin film, silicon, nanostructures, Schottky diode, current transport mechanisms

https://doi.org/10.15407/nnn.17.03.491

References

1. I. Q. Pashaev, Semiconductors, 46: 1085 (2012). https://doi.org/10.1134/S1063782612080155
2. E. Ozerden, Y. S. Ocak, A. Tombak, T. Kilicoglu, and A. Turut, Thin Solid Films, 597: 14 (2015). https://doi.org/10.1016/j.tsf.2015.11.013
3. I. Jyothi, V. Janardhanam, H. Hong, and Ch.-J. Choi, Materials Science in Semiconductor Processing, 39: 390 (2015). https://doi.org/10.1016/j.mssp.2015.05.043
4. W. Filali, N. Sengouga, S. Oussalah, R. H. Mari, D. Jameel, N. A. Al Saqri, M. Aziz, D. Taylor, and M. Henini, Superlattices and Microstructures, 111: 1010 (2017). https://doi.org/10.1016/j.spmi.2017.07.059
5. X. Shen, B. Sun, D. Liu, and S.-T. Lee, J. Am. Chem. Soc., 133, No. 48: 19408 (2011). https://doi.org/10.1021/ja2071237
6. M. M. Solovan, V. V. Brus, A. I. Mostovyi, P. D. Maryanchuk, I. G. Orletskyi, T. T. Kovaliuk, and S. L. Abashin, Semiconductors, 51: 542 (2017). https://doi.org/10.1134/S1063782617040200
7. M. M. Solovan, J. Nano- Electron. Phys., 10, No. 2: 02030 (2018). https://doi.org/10.21272/jnep.10(2).02030
8. X. Zhang, D. Hu, Z. Tang, and D. Ma, Applied Surface Science, 357: 1939 (2015). https://doi.org/10.1016/j.apsusc.2015.09.146
9. J. Oh, H.-Ch. Yuan, and H. M. Branz, Nature Nanotechnology, 7: 743 (2012). https://doi.org/10.1038/nnano.2012.166
10. A. I. Mostovyi, V. V. Brus, and P. D. Maryanchuk, Semiconductors, 47: 799 (2013). https://doi.org/10.1134/S1063782613060171
11. B. L. Sharma and R. K. Purohit, Semiconductor Heterojunctions (Oxford–New York: Pergamon Press: 1974). https://doi.org/10.1016/B978-0-08-017747-2.50005-8
12. S. M. Sze, Physics of Semiconductor Devices. 3rd Ed. (Eds. S. M. Sze and K. Kwok) (New Jersey: Wiley: 2007), p. 815.
13. V. V. Brus, Semicond. Sci. Technol., 27: 035024 (2012). https://doi.org/10.1088/0268-1242/27/3/035024
14. V. V. Brus, Semiconductors, 46: 1012 (2012). https://doi.org/10.1134/S1063782612080040

This article is licensed under the Creative Commons Attribution-NoDerivatives 4.0 International License
© NANOSISTEMI, NANOMATERIALI, NANOTEHNOLOGII G. V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine, 2019
© M. M. Solovan, A. I. Mostovyi, V. V. Brus, P. D. Maryanchuk, 2019
E-mail: tatar@imp.kiev.ua Phones and address of the editorial office About the collection User agreement