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M. M. Solovan, A. I. Mostovyi, V. V. Brus,, P. D. Maryanchuk
«Influence of Nanostructurization of the Silicon on the Electrical and Photoelectrical Properties of Schottky Diodes Ni/n-Si»
491–506 (2019)

PACS numbers: 71.55.Gs, 72.80.Ey, 73.20.Hb, 73.30.+y, 73.40.Gk, 73.40.Lq, 85.60.Bt

This paper presents the results of studies of the physical properties of the planar and nanostructured Schottky diodes Ni/n-Si fabricated by means of the thin nickel films deposition by the magnetron sputtering onto the planar and nanostructured substrates of n-type Si. The electrical and photoelectric properties of the Schottky diodes Ni/n-Si are investigated, and the dominating current-transport mechanisms are established: at forward bias, it is well described by the over-barrier emission in the voltage range 3kT/e???V???0.1 V and the tunnel mechanism in the voltage range V???0.1 V; at reverse bias, there is the tunnel mechanism for the planar Schottky diodes Ni/n-Si; at forward bias, it is well described by the emission recombination in the region of initial forward displacements and the tunnelling mechanism in the region of voltages V???0.2 V; and at reverse bias, there is the tunnel mechanism for the nanostructured Schottky diodes Ni/n-Si. The obtained Schottky diodes Ni/n-Si possess sharply determined rectifying properties with height of the potential barrier ?0???0.27 V. A new method for determining the active area of nanostructured surface-barrier structures is proposed. The resistance value of the depleted area and the barrier capacity of the studied Schottky diodes are determined. As established, the studied Schottky diodes Ni/n-Si can be successfully used as photodiodes in photodiode operation.

Keywords: nickel, thin film, silicon, nanostructures, Schottky diode, current transport mechanisms

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This article is licensed under the Creative Commons Attribution-NoDerivatives 4.0 International License
© NANOSISTEMI, NANOMATERIALI, NANOTEHNOLOGII G. V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine, 2019
© M. M. Solovan, A. I. Mostovyi, V. V. Brus, P. D. Maryanchuk, 2019

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