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G. P. Malanych and V. M. Tomashyk
«Influence of the Viscosity Modifier in H2O2–HBr–Ethylene Glycol Solutions on the Chemical Etching of PbTe Single Crystals and Pb1?xSnxTe Solid Solutions»
637–647 (2017)

PACS numbers: 68.35.Ct, 68.37.Ps, 68.55.J-, 77.84.Bw, 81.05.Hd, 81.65.Cf, 81.65.Ps

The investigation is concerned with both the interaction of the PbTe and Pb1-xSnxTe solid-solutions’ single crystals with the (H2O2–HBr–ethylene glycol)/ethylene glycol (EG) bromine-exhaling mixtures and the development of the etchant compositions as well as the schedule of the surface treatment of the above-mentioned semiconductor materials using the obtained experimental data. The dependences of the chemical-mechanical (CMP) and chemical-dynamical (CDP) polishing rates on the dilution of the base polishing etchant by organic compound are determined. The dissolution of these semiconductor materials in the aqueous (H2O2–HBr–EG)/EG solutions is investigated, and ‘etchant composition–etching rate’ dependences with determining the regions of polishing and unpolishing solutions are plotted. As found, the semiconductors etching rate (CMP) decreases from 185.0 to 23.0 mkm/min and the polishing features of the H2O2–HBr–EG etching composition are improved when the EG content is increased. The minimum value of the etching rates is achieved when the saturation with organic component is maximum (60 vol.%). The influence of the quantitative and qualitative etchant compositions and the chemical treatment procedures on the PbTe and Pb1?xSnxTe solid-solution surface roughness is established using metallography and strip chart recording. As revealed, CMP of the semiconductors by (H2O2–HBr–EG)/EG solutions promotes both the decrease of the structural damages of the substrate and the preparation of the high-quality polished surface. The polishing etchant compositions (H2O2–HBr–EG)/EG and the CDP and CMP technological procedures for the disturbed layer elimination, controlled thinning of the plates up to reference dimension, the thin-layers removing, and the PbTe and Pb1-xSnxTe solid-solution surface finishing are optimized.

Key words: chemical etching, lead telluride, solid solutions, etching rate, chemical-mechanical polishing.

https://doi.org/10.15407/nnn.15.04.0637

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