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I. V. Levchenko, I. B. Stratiychuk, V. M. Tomashyk, G. P. Malanych, A. S. Stanetska, A. A. Korchovyi
«Influence of the C6H8O7 Concentration Change on the Chemical Interaction of InAs, InSb, GaAs and GaSb with the Etching (NH4)2Cr2O7–HBr–C6H8O7 Solutions»
495–506 (2017)

PACS numbers: 61.72.uj, 68.35.bg, 68.35.Ct, 68.37.Ps, 81.65.Cf, 81.65.Ps, 82.65.+r

In this article, the peculiarities of the chemical-dynamic polishing of III–V semiconductors in the etching (NH4)2Cr2O7–HBr–C6H8O7 compositions using various C6H8O7 concentrations are determined. As revealed, the investigated bromine emerging mixtures are characterized by low etching rates. A comparative analysis of the influence of compositions with various concentrations of a citric acid on both the etching solution–crystal chemical interaction and the quality of the resulting surface is made. As established, the increase of the C6H8O7 concentration promotes the decrease of the semiconductor dissolution rate from 7.5 ?m/min to 0.1 ?m/min. The minimum value of the etching rates is achieved when the saturation of the organic component is maximum (80 vol.%), and this value is not depend on the initial C6H8O7 concentration. As shown, the etching (NH4)2Cr2O7–HBr–C6H8O7-based compositions with initial 20% C6H8O7 (in comparison with 40% one) are characterized by higher etching rates, and they can be used for the high-quality finish treatment of the InAs, InSb, GaAs, and GaSb crystal surfaces. As found, the arrangement of the polishing and unpolishing regions is independent on the changes of the initial citric-acid concentration. The polishing solution region contains (in vol.%) 2–22 vol.% (NH4)2Cr2O7, 10–98 vol.% HBr and 0–80 vol.% citric acid for the InAs and GaAs crystals, and for the InSb and GaSb crystals, 2–19 vol.% (NH4)2Cr2O7, 10–98 vol.% HBr, 0–80 vol.% C6H8O7. Only antimonides have the unpolishing solution region. As found, the polishing by the (NH4)2Cr2O7–HBr–C6H8O7-based etchants more effectively decreases the structural damages of semiconductors when the 20% C6H8O7 is used.

Key words: semiconductors, citric acid, chemical-dynamic polishing, etchants, bromine emerging solutions.

https://doi.org/10.15407/nnn.15.03.0495

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