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В. О. Харченко, Д. О. Харченко, І. О. Лисенко, В. В. Яновський, А. В. Дворниченко
«Формування нанорозмірних структур на поверхні матеріялів при йонному розпорошенні»
319–374 (2016)

PACS numbers: 05.40.Ca, 64.60.al, 68.35.Ct, 68.55.J-, 79.20.Rf, 81.16.Rf, 82.40.Np

Processes of nanosize surface-structures’ formation during ion-beam sputtering are studied. By considering the anisotropic model taking into account fluctuations of the incident ions’ flow, the diagrams illustrating the possible types of the equiaxed and wave surface structures, which are implemented in the system, are obtained. As shown, the number of such structures at late stages of the system evolution remains constant. Temporal dependences of the surface growth and its roughness exponents are discussed. Dynamics of pattern formation on the surface is studied taking into account fluctuations of the incident angle. As shown, the statistical properties of the multiplicative-noise impact on the dynamics of pattern formation, character and morphology of the surface structures. Within the framework of the generalized model taking into account the relaxation of the irradiated surface, a phase diagram is obtained illustrating domains of main system parameters, where stationary structures on the surface of the sputtered material and smooth surface can be realized. Dynamics of structural defects is discussed in detail. The developed approach is applied to simulate sputtering process of the silicon surface with argon ions. The dependences of the penetration depth of the ions and the sputtering yield on both the incident angle and the energy of the ions are obtained. As shown, at small values of incident angle, the equiaxed (isotropic) structures are realized, whereas at large values of the incident angle, wave structures are formed during a sputtering. The dependences of the wavelength of the silicon structures on the energy of the incoming ions are calculated. As shown, the linear size of isotropic structures decreases with growing energy of the incident ions and takes the value of the order of several tens of nanometres.