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Ю. О. Шкурдода, А. М. Чорноус, В. О. Кравченко, В. Б. Лобода
«Магнеторезистивні властивості нанокристалічних плівок кобальту»
293–307 (2016)

PACS numbers: 68.55.J-, 73.25.+i, 73.50.Jt, 73.61.At, 73.63.Bd, 75.47.Np, 81.40.Rs

Dependences of crystal structure, morphology, electrical and magnetoresistive properties of ultrathin films of Co on effective thickness in the range of d???3–30 nm are studied. As shown, all obtained samples have island structure with the sizes of individual islands of 3–5 nm for condensed films and of 30 nm for annealed ones at a temperature of 700 K. Conductivity and magnetoresistance of films are determined by their thickness and morphology. For films with d???3–10 nm, conductivity is thermally activated, and tunnelling magnetoresistance is realized. Annealing of films with d???20–30 nm leads to anisotropy magnetoresistance. The maximum value of the tunnelling magnetoresistance of 0.5% for condensed films with perpendicular geometry.