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І. Б. Оленич, О. Б. Перевізник
«Фоточутливі структури на основі модифікованого паладієм поруватого кремнію»
191–202 (2016)

PACS numbers: 68.37.Hk, 72.40.+w, 73.50.Pz, 73.63.-b, 81.05.Rm, 84.60.Jt, 85.60.-q

In this work, we fabricate photosensitive sandwich-like structures based on porous silicon by means of both electrochemical etching of silicon wafer and adding palladium into porous layer. The effect of porous layer doping by palladium ions on electrical and photovoltaic properties of the obtained structures is studied. The increase of electrical conductivity and photoinduced voltage in investigated structures is found because of palladium incorporation into the porous silicon matrix. Temperature, time, and energy dependences of photoinduced voltage of the barrier structures are measured. The existence of trap levels of non-equilibrium carriers, which affect the electronic processes in porous silicon nanostructures, is confirmed. Spectral characteristics of photoresponse within the 450–1100 nm wavelength range are investigated. The obtained results broaden the prospects of application of the structures based on porous silicon in photoelectronics.