Ñêà÷àòü ïîëíóþ âåðñèþ ñòàòüè (â PDF ôîðìàòå)
Â. À. Òàòàðåíêî, Ï. Î. Ñåëèùåâ, Î. Â. Îë³éíèê, É. Á. Ïàðê
«Ô³çè÷íà ê³íåòèêà åâîëþö³¿ íàíîìàñøòàáíî¿ äèñèïàòèâíî¿ ñòðóêòóðè âàêàíñ³éíî¿ ï³äñèñòåìè â ÃÖÊ-êðèñòàëàõ â óìîâàõ ôëþêòóàö³é øâèäêîñòè ´åíåðàö³¿ òî÷êîâèõ äåôåêò³â ï³ä îïðîì³íåííÿì: ñòîõàñòè÷íèé ìîäåëü»
629–666 (2012)
PACS numbers: 05.65.+b, 61.50.Lt, 61.72.Bb, 61.72.jd, 61.72.Qq, 61.80.Az, 82.40.Ck
A kinetic model for the influence of external noise, such as fluctuations of the point defects’ generation rate and inhomogeneity of irradiated f.c.c. crystal, on the formation of dissipative modulated structure in a spatial distribution of vacancies is considered. The generation rate of vacancy-type point defects all over the sites and a density of their dislocation-type sinks are modelled as independent random uniform stationary fields and with certain defined parameters of fluctuation correlations—spatial and temporal ones. Such stochastic fields can induce a spatial redistribution of vacancies that can lead to their density stationary uniform field or stochastic one. By the average value and correlation functions of these fluctuations, the conditions for interacting fluctuations of the vacancy density, under which this homogeneous random field becomes unstable in relation to the stochastic field with a spatially periodic mean distribution of vacancies’ density, are determined. For instance with f.c.c. nickel as a model, the temperature dependences of spatial periods of the dissipative modulated structure of vacancies’ subsystem in f.c.c. crystal in mentioned cases are numerically forecasted and analysed, taking into account the total (‘electrochemical’ + ‘strain-induced’) interaction between vacancies. Such a geometrical parameter for a dissipative modulated structure is also determined by the kinetic characteristics of vacancies’ redistribution.
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