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М. А. Заболотний, А. Ю. Сорока, О. П. Дмитренко, М. П. Куліш, Ю. М. Барабаш, М. О. Давиденко, С. Л. Студзинський, О. П. Оласюк, О. М. Рарата
«Фотоґенерація носіїв заряду в тонких плівках нанокомпозитів ПЕПК–С60»
519–531 (2012)

PACS numbers: 72.20.Jv, 72.80.Tm, 73.30.+y, 73.50.Gr, 73.50.Pz, 73.61.Wp, 83.60.La

The process stages of charge-carriers’ photogeneration in amorphous semiconductors with impurities are under investigation until now. Photogeneration properties of amorphous semiconductors doped by fullerenes of various concentrations are studied. As revealed, the melting point of composites of poly-N-epoxypropylcarbazole (PEPC) with fullerene C60 increases with growing C60 concentration. Increase of effective temperature with growing C60 concentration takes place, indicating the participation of C60 in the formation of Coulomb traps in the centres of charge-carriers’ photogeneration. The value of effective temperature coincides with the value of the melting temperature of PEPC–C60 composites with an accuracy of 10%.