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2012

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том 10 / 

выпуск 3

 



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Р. І. Бігун, М. Д. Бучковська, Б. Р. Пенюх, З. В. Стасюк, Д. С. Леонов
«Вплив підшару ґерманію на процес перколяції в тонких плівках паладію»
503–509 (2012)

PACS numbers: 64.60.ah, 64.60.an,72.10.Fk,72.15.Qm,73.40.-c,73.50.Bk, 73.61.At

Electrical conduction in as deposited ultrathin palladium films is investigated. Predeposition of subatomic-thickness Ge sublayer on dielectric substrates hastens metallization of palladium films. The percolation theory is used for explanation of the metallisation in palladium layer. The germanium sublayer promotes 2D mechanism of metal film growth. The size dependences of palladium film conductivity are explained within the scope of the electronic transport theory in finite-size systems.

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