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З. В. Стасюк, Р. І. Бігун, Ю. А. Куницький*, Н. С. Колтун, О. Є. Кравченко
«Низькотемпературні електропровідність та термоелектрорушійна сила плівок міді нанометрової товщини »
599–605 (2011)

PACS numbers: 61.72.Hh, 72.10.Fk, 73.25.+i, 73.50.Bk, 73.50.Lw, 73.61.At, 73.63.Bd

Electroconductivity and thermoelectric power of the copper polycrystalline nanometer-thickness films deposited under ul-trahigh vacuum conditions are investigated. As revealed, the energy parameters of as-deposited films are similar to parame-ters of annealed copper films. Difference in size-dependence courses of kinetic coefficients is caused by the change of grain-boundary scattering conditions for carriers. Experi-mental results are explained within the scope of the classical finite-size-effect model for charge transport. The charge-transport parameters, ??, ??, S?, and ??, which characterize a metal film of infinite thickness and structure identical to the structure of film of thickness d, are calculated.

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