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Н. И. Ходаковский, С. Ю. Ларкин, Г. Г. Галстян* Probe methods for nanoelectronic devices design and their di-agnostics using electrostatic force microscopy are studied. The ways of increasing of information capability of measure-ments of the charge and potentials distributions in the pro-cess of formation of nanostructure elements are analysed. |
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