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«Calculations of Band Model of Nanocrystalline Silicon»
0987–0998 (2009)

PACS numbers: 71.20.Mq, 71.23.Cq, 71.35.-y, 73.20.Mf, 73.21.Fg, 73.22.Lp, 78.67.Bf

In a given work, the quantitative analysis of energy spectrum of silicon nanocrystallite in a vacuum and in amorphous material is realized. Influence of intermediate layer on the boundary between crystallite and matrix is taken into consideration. On the basis of theoretical calculations, the band model of nanosilicon is proposed. As shown, this material can be used to design effective photodetectors because of its variable-gap energy structure.

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