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«Galvanomagnetic Properties of Bismuth Thin Films Doped with Tellurium »
0487–0493 (2009)

PACS numbers: 72.20.My, 73.43.Qt, 73.50.Jt, 73.61.At, 73.63.Bd, 81.07.Bc, 81.15.Ef

As revealed, using method of thermal evaporation in vacuum for deposition of Bi crystals doped with Te on mica substrates, one can provide donor action of Te in thin-film state and reach deeper alloying of Bi than that in bulk crystal. As shown, the mobility of charge carriers (electrons) in thin films is lower than that for bulk crystals. It may be conditioned by both the growth of electrons’ concentration and the increase of input of surface scattering in the thin-film state. Magnetofield dependences of Hall coefficient and magnetoresistance ?are analyzed, and conclusion is made that magnetic field in region of 0.1–1.0 T can be considered as weak for thin films of Bi doped with Te and for Bi crystals with 0.5 at.% Te content. These results can be used for fabrication of bismuth-based low-dimensional structures with controlled concentration of electrons.

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