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T. Yu. BILYK, O. M. SHMYREVA, and M. M. MEL’NYCHENKO
«Technological Methods for Control of Nanostructured Silicon Properties »
PACS numbers: 78.55.Mb, 78.67.Rb, 81.07.Bc, 81.40.Tv, 81.65.Cf, 85.60.Dw, 85.60.Gz
Formation of nanoporous silicon on monocrystalline silicon wafers changes structural properties that results in forbidden-bandwidth change and quantum-dimension effects appearance as well as appearance of new silicon compounds with higher hydrogen and amorphous-silicon contents on the silicon surface. Such a complex structure with new electrophysical, photoelectrical, thermophysical, and photoluminescent properties makes possible new types of semiconductor devices, in particular, light detectors of short-wave spectral range. Goal of this work is to study technological methods for governing by functional properties of nanoporous silicon using new compositions of etching agents.