Nanolasers Based on Semiconductor Quantum Dots
65–82 (2026)
PACS numbers: 71.35.-y, 73.21.La, 73.22.Lp, 73.63.Kv, 78.40.Fy, 78.67.Hc, 81.07.Ta
Received 6 September, 2025; in revised form, 12 September, 2025
The minireview analyses fundamental experimental and theoretical research and applied applications of nanolasers based on semiconductor (including also perovskite) quantum dots. As shown, the development of nanolasers based on semiconductor and perovskite quantum dots is a consequence of long-term progress in the physics and chemistry of semiconductors. Due to the dimensional quantum limitation of the motion of quasiparticles (electrons and holes) in quantum dots, it becomes possible to vary the emission and absorption spectra by changing the sizes of quantum dots in the nanorange. This allowed semiconductor and perovskite quantum dots to demonstrate a high quantum yield and a narrow width of the emission spectrum. These properties of semiconductor (including also perovskite) quantum-dots' ensembles made it possible to develop a number of nanolasers with high optical characteristics. Current trends in laser-technology development are focused on environmental requirements, in particular, on the development of lead-free perovskite quantum dots to reduce toxicity. Hybridization of perovskite quantum dots allows passivation of the surface, reduction of defect density and increase of charge-carrier lifetime, which lowers the threshold of laser generation and increases the stability of the devices. Such hybrid systems demonstrate improved crystallinity, increased charge-carrier mobility and efficient charge transfer between layers that contributes to increasing quantum efficiency and expanding the emission spectrum from the visible range to the near-infrared range. This opens up new opportunities for the creation of highly efficient, stable and environmentally safe optoelectronic and laser devices of a new generation.
KEY WORDS: perovskites, quantum dots, optical transitions, quantum energy levels, nanolasers
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