A Review on Synthesis and Characterization of Some Copper-Oxide Properties and Potential Application
677–718 (2025)
PACS numbers: 61.05.cp, 68.55.J-, 73.61.Le, 78.30.Hv, 78.55.Hx, 78.67.Bf, 81.07.Bc
Received 24 December, 2023; in revised form, 27 December, 2023
This review focuses on the synthesis and characterization of p-type metal-oxide (p-type CuO) semiconductor thin films used for chemical-sensing applications. p-Type CuO thin films exhibit several advantages over n-type metal-oxide, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO thin film is strongly related to the intrinsic physicochemical properties of the material and their thickness. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-type CuO thin films are reviewed herein. Copper oxide is called a multifunctional material by dint of possessing a broad range of chemical and physical properties, which are often highly sensitive to changes in processing parameters, although, extensive research and development, the optimization of the processing parameters are still in full development until today, where the overall research found that the different properties of copper oxide are based on the experimental conditions. In this extensive review, we focus more on discussing the effect of major synthesis processing parameters such as precursor solution, annealing temperature, and thickness of the nanomaterial, which various researchers have obtained. These factors are critically reviewed, evaluated, and compared.
KEY WORDS: semiconductor copper oxide, synthesis methods, p-CuO thin films, precursor solution, annealing temperature
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