Collection of scientific works Nanosystems, nanomaterials, nanotechnologies
Year 2025 Volume 23, Issue 3
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N.H. MOHAMMAD, Abdulkhaliq Ayuob SULAIMAN, and Abdullah L.M. ALABDULLAH

College of Science, Department of Physics, Mosul University, Al Majmoaa Str., 41002 Mosul, Iraq

Fabrication of Cadmium Selenide (CdSe)–Porous Silicon (PSi) Solar Cell

667–675 (2025)

PACS numbers: 68.37.Hk, 68.37.Vj, 78.67.Rb, 81.16.Be, 81.65.Cf, 88.40.hj, 88.40.jp

Received 3 April, 2024; in revised form, 3 June, 2024

Chemical-bath deposition is used to prepare thin films of CdSe on p-type porous-silicon wafers at room temperature. Porous-silicon substrates are prepared using an electrochemical-etching method for etching time of 5 and 15 min. The energy gap of CdSe thin film is of 2.6 eV. Scanning electron microscope images and x-ray spectrum demonstrate that the films of the PSi–CdSe junction show that the films are crystalline with a small presence of the amorphous phase, and the grain size of CdSe compound is of about 38–41 nm. The junction shows I–V characteristics similar to that of ideal-diode and solar-cell characteristics.

KEY WORDS: porous silicon, CdSe thin films, solar-cell characteristics, diode characteristics

DOI: https://doi.org/10.15407/nnn.23.03.0667

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