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Atyaf S. AL RAWAS1, Enas G. YONIS1, and A. J. JARJEES ALSOOFY2

1College of the Dentistry, Department of the Basic Science, Mosul University, Mosul, Iraq
2College of Science, Department of Physics, Mosul University, Mosul, Iraq

Study of Characteristics of Semiconductor GaAs Nanoparticles Prepared by Laser Ablation Method

515–521 (2025)

PACS numbers: 07.60.Rd, 78.20.Ci, 78.40.Fy, 78.67.Bf, 79.20.Eb, 81.16.Mk, 82.70.Dd

Gallium arsenide GaAs nanoparticles are prepared in water using laser ablation method. The optical properties and energy gap of the colloidal solution are investigated using UV-visible spectrometer; the absorption peaks are observed between 200 and 300 nm wavelength, and the energy gap is calculated of about 1.86 eV. Zeta potential value is of about 22.18 mV that gives the impression of acceptable stability of the colloidal solution.

KEY WORDS: gallium arsenide GaAs, laser ablation, zeta potential, optical properties of GaAs

DOI:  https://doi.org/10.15407/nnn.23.02.0515

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