Collection of scientific works Nanosystems, nanomaterials, nanotechnologies
Year 2025 Volume 23, Issue 2
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O.M. BORDUN1, I.O. BORDUN1, I.I. MEDVID1, D.M. MAKSYMCHUK1, I.Yo. KUCHARSKYY1, I.M. KOFLIUK1, and D.S. LEONOV2

1Ivan Franko National University of Lviv, 50 Drahomanov Str., 79005 Lviv, Ukraine
2Technical Center of NAS of Ukraine, 13 Pokrovska Str., 04070 Kyiv, Ukraine

Surface Morphology and Low-Temperature Luminescence of Thin (Y0.06Ga0.94)2O3:Cr3+ Films

437–448 (2025)

PACS numbers: 61.72.Mm, 68.37.Ps, 68.55.J-, 78.55.Hx, 78.60.Lc, 81.15.Cd, 81.40.Tv

Received 16 April, 2025

Thin films of (Y0.06Ga0.94)2O3:Cr are obtained by radio-frequency (RF) ion-plasma sputtering in an argon atmosphere on amorphous α-SiO2 substrates. The surface morphology of the obtained films is studied by means of AFM. The low-temperature (8.6 K) luminescence of the thin films of (Y0.06Ga0.94)2O3:Cr3+ under excitation by synchrotron radiation (22.14 eV and 7.75 eV) is studied. The obtained luminescence spectra are analysed according to excitation energy. A high-energy shift of the R1-line in the spectra of the activator luminescence of the Cr3+ ion in the thin films of (Y0.06Ga0.94)2O3:Cr3+ is found relative to the same for single crystal samples. This shift is analysed in the form of a nephelauxetic effect.

KEY WORDS: gallium oxide, yttrium oxide, chromium activator, thin films, nanocrystals, photoluminescence, synchrotron radiation

DOI: https://doi.org/10.15407/nnn.23.02.0437

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