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YAROSLAV LINEVYCH, VIKTORIIA KOVAL, MYKHAILO DUSHE˛KO, MARYNA LAKYDA, YURII YASIIEVYCH, and SERHII MALIUTA

Silicon 1D Structures for Resistive and Diode Temperature Sensors
335–351 (2024)

PACS numbers: 07.07.Df, 65.80.-g, 68.37.Ps, 81.07.Gf, 81.16.Be, 84.32.Ff, 85.35.Be

Resistive and diode temperature sensors based on silicon nanowires (SiNWs) are fabricated. Silicon nanowires are obtained by two-stage metal-assisted chemical etching (MACE) technique. The influence of SiNWs synthesis parameters on device characteristics is investigated. In particular, the influence of the duration of the first and second stages of MACE, the content of solutions based on AgNO3 and H2O2, the presence of textured surface of silicon wafer before the MACE process, additional processing in an isotropic/anisotropic etchant after the MACE process on the characteristics of temperature sensors is determined. The electrical and thermosensitive parameters for obtained sensors are calculated, namely, resistance, rectifying coefficient, and coefficient of thermosensitivity. A significant influence of the MACE-process parameters on the lateral roughness and volume porosity of the thermosensitive surface is determined. As established, the following technological operations lead to an increase in resistance: a raise in the deposition time of silver nanoparticles and the use of additional post-chemical treatment, as well as a decrease in the etching time and a decrease in the amount of H2O2. The resistance of the array of silicon nanowires is in the range of 27.6–199.6 Ohm. As established, the following process parameters improve the rectifying characteristics: increasing the content of hydrogen peroxide, the presence of preliminary texturing of silicon surface, as well as the use of additional post-chemical treatment in an acid etchant. The maximum rectifying coefficient of diode temperature sensors is of 2503. Significant impact of process parameters on the lateral roughness and bulk porosity of the thermosensitive surface is revealed. As found, the thermal sensitivities of both diode sensors and resistive ones are improved with the increase of MACE first-stage parameters and the decrease of MAŃĹ second-stage parameters, as well as in the presence of acid etching treatment. The maximum thermal sensitivity coefficient of thermistors based on silicon nanowires is of 2336 ppm/K, while, for thermodiodes, this coefficient is of 2.5 mV/K

KEY WORDS: metal-assisted chemical etching, silicon nanowires, thermodiode, thermistor

DOI:  https://doi.org/10.15407/nnn.22.02.335

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