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B. TURKO, B. SADOVYI, V. VASIL’YEV, Y. ELIYASHEVSKYY, Y. KULYK, A. VAS’KIV, R. BIHUN, V. APOPII, and V. KAPUSTIANYK

Effect of Dopant Concentration and Crystalline Structure on Absorption Edge of ZnO:B Films
239–247 (2024)

PACS numbers: 61.05.cp, 68.37.Ps, 68.35.Ct, 68.55.Ln, 78.20.Ci, 78.66.Li, 78.67.Bf

The crystalline structure and absorption spectra of thin ZnO films with different levels of B doping are studied. The films are deposited on the glass substrates using the radio-frequency magnetron sputtering without targeted-substrates’ heating. The concentration of free charge carriers is estimated. The observed ‘blue’ shift of the fundamental absorption edge in the ZnO:B films with increasing of doping level is explained by the Burstein–Moss effect

KEY WORDS: boron-doped zinc oxide, crystalline structure, absorption edge, optical bandgap, Burstein–Moss effect

DOI:  https://doi.org/10.15407/nnn.22.02.239

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