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AHMED HASHIM and M.H. ABBAS

Boosting the Dielectric Properties of PVA/In2O3/SiC Nanostructures for Electronics Nanodevices
167–176 (2024)

PACS numbers: 72.80.Tm, 77.22.Ch, 77.22.Gm, 77.55.+f, 77.84.Lf, 81.07.Pr, 82.35.Np

The present work aims to prepare of the indium oxide (In2O3)–silicon carbide (SiC) nanostructures doping the polyvinyl alcohol (PVA) to use in different electronics fields. The dielectric properties of PVA–In2O3–SiC nanocomposites are examined. The results demonstrate that the dielectric constant and dielectric loss of the PVA–In2O3–SiC nanocomposites are decreased with an increase in the frequency, while the electrical conductivity is increased as frequency is increased. The dielectric constant, dielectric loss, and electrical conductivity of PVA are increased with an increase in the In2O3–SiC nanoparticles’ (NPs) concentration. Finally, the obtained results for the dielectric properties indicate that the PVA–In2O3–SiC nanocomposites can be suitable in various electronics fields

KEY WORDS: polyvinyl alcohol, SiC, In2O3, nanocomposites, dielectric properties, conductivity

DOI:  https://doi.org/10.15407/nnn.22.01.167

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