Collection of scientific works Nanosystems, nanomaterials, nanotechnologies Year 2023 Volume 21, Issue 4
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O. M. Bordun, I. O. Bordun, I. I. Medvid, M. V. Protsak, I. Yo. Kukharskyy, V. G. Bihday, I. M. Kofliuk, I. Yu. Khomyshyn, and D. S. Leonov
Surface Morphology of ZnGa2O4:Cr Thin Films Obtained by RF Ion-Plasma Sputtering
709–720 (2023)

PACS numbers: 61.72.Mm, 68.35.Ct, 68.37.Ps, 68.55. A-, 68.55. J-, 81.15.Cd, 82.80.Pv

Thin ZnGa2O4:Cr films are obtained by radio-frequency (RF) ion-plasma sputtering in an argon atmosphere on the single-crystal NaCl and amorphous nu-SiO2 substrates. The study of the surface morphology of thin films by atomic force microscopy (AFM) shows that the average diameter of the grains forming the film surface decreases from 320 nm to 211 nm, when switching over from NaCl substrates to nu-SiO2 ones. The heat treatment of films on nu-SiO2 substrates in an argon atmosphere has weak effect on the average grain diameter, while heat treatment in an air leads to an increase in the average grain diameter to 316 nm. XPS spectra show that, after high-temperature annealing, the studied films may contain an excessive presence of the Ga2O3 phase in addition to the ZnGa2O4 phase. It has been found that, when ZnGa2O4:Cr films are annealed in an air, grain growth occurs along the film surface, and when annealed in an argon atmosphere, grain growth occurs perpendicularly to the film surface.

Key words: zinc gallate, chrome activator, thin films, crystallites, surface morphology.

Issue DOI:  https://doi.org/10.15407/nnn.21.04.709

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