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Year 2023 Volume 21, Issue 2 |
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Issues/2023/vol. 21 /Issue 2 |
M. A. Zabolotnyi, L. I. Aslamova, E. M. Boboshko, A. A. Kolesnichenko, D. S. Leonov, R. V. Lytvyn, A. Yu. Sezonenko, M. M. Yamshinskij, and M. Yu. Barabash
Peculiarities of the Process of Photogeneration of Charge Carriers in Amorphous Molecular Semiconductors
0261–0271 (2023)
PACS numbers: 42.70.Ln, 61.43.Dq, 68.35.bm, 72.40.+w, 73.50.Pz, 78.20.Nv, 82.35.Cd
The duration and radius of charge-carriers’ thermalization during the photogeneration of them in amorphous molecular semiconductors (AMS) are studied in present work. The samples in the form of thin layers of carbazole-containing materials obtained by pouring toluene solutions are used in the experiments of spectral-sensitivity measurements. A phenomenological model for the thermalization process based on the assumption of the Newtonian nature of the energy-loss rate dependence for non-equilibrium electron is proposed. Within the model, the dependences of the thermalization duration on the frequency of the exciting light, the AMS temperature and the parameters determining the speed and range of energies are established. As shown, the excess energy losses are realized in the system by an unbalanced electric-charge carrier. Comparison of them with experimental data is demonstrated. The aim of the work is both the experimental study of the thermalization process of carbazole-containing AMS located in an external electric field during photoexcitation of them and the development of a relevant model for charge-carriers’ thermalization process.
Key words: amorphous molecular semiconductors, photosensitivity, radius and time of thermalization, electric-field strength, spectral dependence.
https://doi.org/10.15407/nnn.21.02.261
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