Collection of scientific works Nanosystems, nanomaterials, nanotechnologies Year 2023 Volume 21, Issue 1
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Î. Ì. Bordun, B. Î. Bordun, I. Yo. Kukharskyy, I. I. Medvid, D. Ì. Maksymchuk, Zh. Ya. Tsapovska, and D. S. Leonov
Photoconductivity of Thin β-Ga2O3 and β-Ga2O3:Cr3+ Films
0049–0055 (2023)

PACS numbers: 61.72.jn, 68.55.jd, 73.50.Pz, 73.61.Ng, 78.55.-m, 81.15.Gh, 81.40.Tv

The presence of photoconductivity in thin films of β-Ga2O3 and β-Ga2O3:Cr3+ obtained by radio-frequency (RF) ion-plasma sputtering after heat treatment in air has been established. The obtained photoconductivity spectra are analysed, and it is shown that the photoconductivity in pure thin β-Ga2O3 films is due to intrinsic photoconductivity because of the band–gap electronic transitions. In thin β-Ga2O3:Cr3+ films, in addition to this photoconductivity band, there are also three photoconductivity bands observed due to electronic transitions within the Cr3+ activator ion. At the same time, all three excited levels fall into the conduction band and lead to the appearance of U-, Y-, and V-bands of photoconductivity.

Key words: gallium oxide, thin films, activator, photoconductivity.

https://doi.org/10.15407/nnn.21.01.049

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