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O. M. Bordun, I. Yo. Kukharskyy, I. I. Medvid, D. M. Maksymchuk, I. M. Bordun, P. Chabetsky, and D. S. Leonov
The Local Trap Centres in Thin β-Ga2O3:Cr3+ Films
0631–0638 (2022)

PACS numbers: 61.05.cp, 61.72.J-, 68.55.Ln, 72.20.Jv, 78.60.Kn, 81.15.Cd, 81.15.Gh

The results of the investigation of thermally stimulated luminescence (TSL) of thin β-Ga2O3:Cr3+ films are presented. The depth of the trap centre (TC) responsible for the TSL band with a maximum in the region of 290 K is determined. The non-elementary nature of this TC is established, and the possibility of the realization of diffusion-controlled tunnel recombination at releasing the TC in thin β-Ga2O3:Cr3+ films is indicated. The measured TSL spectra show the presence of a wide band of emission due to 4T2 → 4A2 transitions in Cr3+ ions. The R-lines (for the 2E → 4A2 transitions) and their phonon repetitions in the long-wavelength region are interpreted.

Key words: gallium oxide, thin films, activator, thermally stimulated luminescence.

https://doi.org/10.15407/nnn.20.03.631

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