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2022

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vol. 20 /

Issue 2

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O. M. Bordun, I. Yo. Kukharskyy, I. I. Medvid, D. M. Maksymchuk, F. O. Ivashchyshyn, D. Całus, and D. S. Leonov
Electrical Conductivity of Pure and Cr³⁺-Doped β-Ga₂O₃ Thin Films
0321–0329 (2022)

PACS numbers: 61.72.jn, 68.55.jd, 73.50.Gr, 73.61.-r, 78.60.Kn, 81.15.-z

The electrical conductivity of pure and Cr³⁺-doped β-Ga₂O₃ thin films is studied. As found, the thin films of β-Ga₂O₃ and β-Ga₂O₃:Cr³⁺ annealed in an oxygen atmosphere have a low conductivity of the order of 10^-10 Ohm^-1·cm^-1. The conductivity of such films is associated with the release of electrons from deep donor levels due to oxygen vacancies. At annealing within the reducing atmosphere, the specific conductivity of β-Ga₂O₃ thin films increases to 10^-3 Ohm^-1·cm^-1 and is associated with shallow donor levels due to interstitial gallium atoms. At annealing within the reducing atmosphere, the specific conductivity of β-Ga₂O₃:Cr³⁺ thin films increases to 10^-8 Ohm^-1·cm^-1 and related with deep donor levels due to chromium-impurity ions in the Cr²⁺ state. The relationship between the luminescence and the conductivity in β-Ga₂O₃:Cr³⁺ thin films is analyzed. As shown, by changing the thermal-treatment conditions for the β-Ga₂O₃:Cr thin films, it is possible to change the concentration of chromium-impurity ions in the Cr²⁺ and Cr³⁺ states and, thus, to control the electrical conductivity and luminescence.

Key words: gallium oxide, thin films, activator, conductivity.

https://doi.org/10.15407/nnn.20.02.321

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