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2021

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vol. 19 /

Issue 3

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O. K. Shuaibov, O. Y. Minya, A. O. Malinina, R. V. Hrytsak, O. M. Malinin, M. P. Chuchman, Z. T. Gomoki
«Characteristics and Parameters of Overvoltage Nanosecond Discharge Between an Electrode Made of Aluminium and an Electrode Made of Chalcopyrite in Nitrogen and Its Application for The Synthesis of Thin Films »
0513–0535 (2021)

PACS numbers: 52.77.-j, 52.80.Tn, 78.60.Fi, 78.60.Hk, 78.67.Bf, 81.15.Gh, 82.33.Xj

The characteristics and parameters of the overvoltage nanosecond discharge in nitrogen at pressures of 13.3 and 101.3 kPa, which is ignited between the electrode made of aluminium and the electrode of a chalcopyrite (CuInSe\(_2\)). In the process of microexplosions of inhomogeneities on the working surfaces of the electrodes in a strong electric field, aluminium vapours and chalcopyrite vapours are introduced into the interelectrode volume. This creates the preconditions for the synthesis of thin films based on quadruple chalcopyrite CuAlInSe\(_2\), which are deposited on a quartz or glass plates installed near the discharge gap. The voltage pulses on the discharge interval of d = 1 mm, the current as well as the pulse energy contribution to the discharge are studied. Plasma radiation spectra are investigated by the method of emission spectroscopy with time resolution, which allows establishing the main excited decay products of the chalcopyrite molecule and the energy states of atoms and single-charged ions of aluminium, copper and indium formed in the discharge. By the method of numerical modelling of plasma parameters of overstressed nanosecond discharge based on aluminium and chalcopyrite vapours in nitrogen by solving the Boltzmann kinetic equation for the energy distribution function of electrons, the temperature and density of electrons in plasma, specific discharge power losses and their rate constants depending on the value of the parameter E/N for plasma vapour–gas mixtures based on nitrogen, aluminium vapour and chalcopyrite are calculated.

Keywords: overvoltage nanosecond discharge, synthesis of thin films

https://doi.org/10.15407/nnn.19.03.513

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