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H. A. Ilchuk, E. O. Zmiiovska, R. Y. Petrus, I. V. Petrovich, I. V. Semkiv, A. I. Kashuba
«Dynamics of Change of Electronic and Optical Properties of Substitutional Solid CdSe\(_{1-x}\)S\(_x\) Solutions»
059–075 (2020)

PACS numbers: 71.15.Dx, 71.15.Mb, 71.20.Nr, 73.20.At, 73.21.Ac, 78.20.Ci, 78.70.En

The results of first-principle studies of the electronic and optical properties of solid CdSe\(_{1-x}\)S\(_x\) solutions (x=0.125–0.875) are presented. The electronic energy spectrum and density of states of solid CdSe\(_{1-x}\)S\(_x\) solutions with a step \(\triangle\)õ=0.125 are calculated. The concentration dependence of the band-gap width is established. The dynamics of changes of basic optical constants (dielectric constant, refractive index, and reflection coefficient) as functions of sulphur content is determined. The results of experimental investigations of thin CdSe\(_{1-x}\)S\(_x\) films (x=0.30\(\pm\)1) are presented. Thin films are obtained by chemical deposition on quartz substrates. The analysis of obtained films and morphology of surfaces is performed using both x-ray fluorescence and scanning electron microscopy. The dependence of band gap on the deposition time for thin films is established. Both the average crystallite size and the dislocation density of the thin CdSeS film are calculated.

Keywords: thin films, electronic band-energy structure, electron density of states, optical constants

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