Issues

 / 

2019

 / 

vol. 17 / 

Issue 1

 



Download the full version of the article (in PDF format)

Yu. O. Kruglyak
«Physics of Nanotransistors: Landauer–Dutt–Lundstrom Transport Model and Ballistic Metal-Oxide-Semiconductor Field-Effect Transistor»
0025–0056 (2019)

PACS numbers: 71.20.-b, 72.80.Ey, 73.23.Ad, 84.32.Ff, 85.30.De, 85.30.Tv, 85.35.-p, 85.40.Bh

The transport model by Landauer–Datta–Lundstrom (LDL) is considered and is further used to construct the MOSFET theory for the low and high voltages in the drain, in quasi-equilibrium conditions and in conditions far from equilibrium. For sufficiently long conduction channels, the results coincide with the usual traditional results, however, it is also possible reliably build the physics of nanotransistors working in the ballistic or quasi-ballistic modes. The LDL approach is used to calculate the output characteristics of ballistic MOSFETs. For this goal, the Landauer equation with constraints imposed by MOS electrostatics is applied. The result is a simple model of ballistic MOSFETs. In the case of nondegenerate statistics, this model is simplified in the same way as it was previously obtained in the thermionic emission model. For MOSFET in the subthreshold mode, one can use nondegenerate statistics. In the regime above the threshold, a conduction band at the top of the barrier is close to or even below the Fermi level. And, nevertheless, it has become common practice in the theory of MOS structures to assume the non-degenerate Maxwell–Boltzmann statistics, since a use of it simplifies calculations and makes the theory visual. Moreover, in practice, as a rule, the values of certain parameters are not known with the required accuracy, so, it became customary to use nondegenerate statistics with a use of empirical parameters to fit to the experimental data.

Keywords: nanoelectronics, field effect transistor, MOSFET, LDL model, transistor metrics, transistor control, virtual source

https://doi.org/10.15407/nnn.17.01.025

References
1. Yu. A. Kruglyak, Nanosistemi, Nanomateriali, Nanotehnologii, 16, No. 2: 201 (2018) (in Russian).
2. Yu. A. Kruglyak, Nanosistemi, Nanomateriali, Nanotehnologii, 16, No. 2: 233 (2018) (in Russian).
3. Yu. A. Kruglyak, Nanosistemi, Nanomateriali, Nanotehnologii, 16, No. 3: 465 (2018) (in Russian).
4. Yu. A. Kruglyak, Nanosistemi, Nanomateriali, Nanotehnologii, 16, No. 4: 597 (2018) (in Russian).
5. S. Datta, Lessons from Nanoelectronics: A New Perspective on Transport (Singapore: World Scientific: 2012). https://doi.org/10.1142/8029
6. M. Lundstrom and C. Jeong, Near-Equilibrium Transport. Fundamentals and Applications (Singapore: World Scientific: 2013).
7. Yu. O. Kruhliak and M. V. Strikha, Ukrainskyi Fizychnyi Zhurnal. Ohliady, 10: 3 (2015) (in Ukrainian).
8. Yu. A. Kruglyak, Nanoelektronika 'Snizu-Vverkh' (Odessa: TJeS: 2015) (in Russian).
9. S. Datta, Lessons from Nanoelectronics. Part A: Basic Concepts (Singapore: World Scientific: 2017). https://doi.org/10.1142/10440-vol1
10. M. Lundstrom, Fundamentals of Nanotransistors (Singapore: World Scientific: 2018); www.nanohub.org/courses/NT.
11. R. F. Pierret, Advanced Semiconductor Fundamentals (Upper Saddle River, NJ, USA: Prentice Hall: 2003).
12. R. Landauer, IBM J. Res. Dev., 1, No. 3: 223 (1957). https://doi.org/10.1147/rd.13.0223
13. Yu. A. Kruglyak, Termoelektrichestvo, 6: 7 (2014) (in Russian).
14. R. Kim and M. Lundstrom, Notes on Fermi-Dirac Integrals (West Lafayette, Indiana, USA: Purdue University: 2011); www.nanohub.org/resources/5475.
15. B. J. Van Wees, H. van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett., 60: 848 (1988). https://doi.org/10.1103/PhysRevLett.60.848
16. D. F. Holcomb, Am. J. Phys., 67: 278 (1999). https://doi.org/10.1119/1.19251
17. M. S. Shur, IEEE Electron Device Lett., 23: 511 (2002). https://doi.org/10.1109/LED.2002.802679
18. M. V. Fischetti, T. P. O'Regan, N. Sudarshan, C. Sachs, S. Jin, J. Kim, and Y. Zhang, IEEE Trans. Electron Dev., 54: 2116 (2007). https://doi.org/10.1109/TED.2007.902722
19. D. Frank, S. Laux, and M. V. Fischetti, Intern. Electron Dev. Mtg. (IEDM), Technical Digest, 553-556 (1992).
20. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M. Lundstrom, IEEE Trans. Electron Dev., 50: 1914 (2003). https://doi.org/10.1109/TED.2003.816524
Creative Commons License
This article is licensed under the Creative Commons Attribution-NoDerivatives 4.0 International License
©2003—2019 NANOSISTEMI, NANOMATERIALI, NANOTEHNOLOGII G. V. Kurdyumov Institute for Metal Physics of the National Academy of Sciences of Ukraine.

E-mail: tatar@imp.kiev.ua Phones and address of the editorial office About the collection User agreement