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O. M. Bordun, B. O. Bordun, I. J. Kukharskyy, I. I. Medvid, Zh. Ya. Tsapovska, D. S. Leonov
«Structure and Electrical Conductivity of the Thin b-Ga2O3 Films»
299–308 (2017)

PACS numbers: 61.05.cp, 61.72.J-, 68.35.Ct, 68.37.Ps, 68.55.J-, 72.20.-i, 81.15.Cd

The structure, phase composition, and surface morphology of the thin b-Ga2O3 films obtained by high-frequency ion-plasma sputtering are investigated. As revealed, the freshly deposited films are formed from crystallites with average diameter of 30 nm. As established, annealing in atmosphere of oxygen, argon, and hydrogen leads to increase in the average diameter of crystallites to 47, 42 and 35 nm, respectively. Conductivity, photoconductivity, and luminescence properties of the thin b-Ga2O3 films deposited by high-frequency ion-plasma sputtering are investigated depending on conditions and atmosphere of heat treatment. As found, after annealing in a reducing atmosphere of hydrogen, there is a significant decrease in the resistivity of films from 1011 Ohm?cm for the freshly prepared films to 106 Ohm cm.

Key words: thin films, electrical conductivity, ion-plasma sputtering.

https://doi.org/10.15407/nnn.15.02.0299

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